Description
Silicon Carbide (SiC) MOSFET use a completely new
technology that provide superior switching performance and
higher reliability compared to Silicon. In addition, the low ON
resistance and compact chip size ensure low capacitance
and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased
power density, reduced EMI, and reduced system size.

Features
l VDS 1200V
l ID (at VGS = 15V) 50A
l RDS(ON) (at VGS = 15V) = 40mΩ
l High Blocking Voltage
l High Frequency Operation
l Low on-resistance
l Fast intrinsic diode with low reverse recovery
l 100% avalanche tested

Application
l Motor Drives
l Solar Inverters
l AC/DC converters
l DC/DC converters
l Uninterruptable power supplies