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STBV10500BY4 Datasheet (PDF) - Innogration Technologies, Inc.
STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.
Part # STBV10500BY4
Download  STBV10500BY4 Download
File Size   1665.35 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Datasheet (PDF)

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STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.

Part # STBV10500BY4
Download  STBV10500BY4 Click to download

File Size   1665.35 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Datasheet (HTML) - Innogration Technologies, Inc.


STBV10500BY4 Product details

Description
The STBV10500BY4 is a 500watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 0.6 to 1GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV




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