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STBV20601BY4V Datasheet (PDF) - Innogration Technologies, Inc.
STBV20601BY4V Datasheet PDF - Innogration Technologies, Inc.
Part # STBV20601BY4V
Download  STBV20601BY4V Download
File Size   1578.19 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description GaN HEMT 50V, 630W,1.8-1.9GHz RF Power Transistor

STBV20601BY4V Datasheet (PDF)

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STBV20601BY4V Datasheet PDF - Innogration Technologies, Inc.

Part # STBV20601BY4V
Download  STBV20601BY4V Click to download

File Size   1578.19 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description GaN HEMT 50V, 630W,1.8-1.9GHz RF Power Transistor

STBV20601BY4V Datasheet (HTML) - Innogration Technologies, Inc.


STBV20601BY4V Product details

Description
The STBV20601BY4V is a dual path 630 watt , Internally matched GaN HEMT, ideal for applications
from 1.8 to 1.9GHz especially for LTE/5G
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 1.8-1.9GHz
 Sub-2GHz power amplifier
 CW or pulsed Amplifier




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