STCV181K0CY4V Datasheet(PDF)

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STCV181K0CY4V Datasheet (PDF) - Innogration Technologies, Inc.


Part #	STCV181K0CY4V

Download	STCV181K0CY4V Download

File Size	1396.17 Kbytes

Page	5 Pages

Manufacturer	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

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Description

Gallium Nitride 50V, 1000W, 1.8-1.9GHz RF Power Transistor

STCV181K0CY4V Datasheet (PDF)

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Part #	STCV181K0CY4V

Download	STCV181K0CY4V Click to download

File Size	1396.17 Kbytes

Page	5 Pages

Manufacturer	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

Logo

Description	Gallium Nitride 50V, 1000W, 1.8-1.9GHz RF Power Transistor

STCV181K0CY4V Datasheet (HTML) - Innogration Technologies, Inc.

STCV181K0CY4V Datasheet HTML 1Page - Innogration Technologies, Inc.

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STCV181K0CY4V Datasheet HTML 5Page - Innogration Technologies, Inc.

STCV181K0CY4V Product details

Description
The STCV181K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.8-1.9GHz, enabled by wide band VBW capability to
support IBW up to 100MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 120 to 140W
average power, according to normal 9dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N3 5G band and B3 4G band
 L band power amplifier

Similar Part No. - STCV181K0CY4V

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Similar Description - STCV181K0CY4V

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