BiCMOS Design Substantially Reduces ICCZ
Output Ports Have Equivalent 25-Ω
Resistors; No External Resistors Are
Required
Specifically Designed to Drive MOS DRAMs
3-State Outputs Drive Bus Lines or Buffer
Memory Address Registers
Flow-Through Architecture Optimizes
PCB Layout
Power-Up High-Impedance State
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015
Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic
Chip Carriers (FK) and Flatpacks (W), and
Standard Plastic and Ceramic 300-mil DIPs
(JT, NT)

description
These 10-bit buffers and bus drivers are
specifically designed to drive the capacitive input
characteristics of MOS DRAMs. They provide
high-performance bus interface for wide data
paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with
active-low inputs so if either output-enable (OE1
or OE2) input is high, all ten outputs are in the
high-impedance state. The outputs are also in the
high-impedance state during power-up and
power-down conditions. The outputs remain in the
high-impedance state while the device is powered
down.
The SN54BCT2827C is characterized for operation
over the full military temperature range of
−55°C to 125°C. The SN74BCT2827C is
characterized for operation from 0°C to 70°C.