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IS66WVC4M16ECLL Datasheet (PDF) - Integrated Silicon Solution, Inc

IS66WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc
Part # IS66WVC4M16ECLL
Download  IS66WVC4M16ECLL Download
File Size   1889.59 Kbytes
Page   68 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 64Mb Async/Page/Burst CellularRAM 1.5

IS66WVC4M16ECLL Datasheet (PDF)

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IS66WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc

Part # IS66WVC4M16ECLL
Download  IS66WVC4M16ECLL Click to download

File Size   1889.59 Kbytes
Page   68 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 64Mb Async/Page/Burst CellularRAM 1.5

IS66WVC4M16ECLL Datasheet (HTML) - Integrated Silicon Solution, Inc


IS66WVC4M16ECLL Product details

Features
⚫ Single device supports asynchronous , page,
and burst operation
⚫ Mixed Mode supports asynchronous write and
synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Asynchronous mode read access : 70ns
Interpage Read access : 70ns
Intrapage Read access : 25ns
⚫ Burst mode for Read and Write operation
 4, 8, 16,32 or Continuous
⚫ Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 20mA
 Burst operation < 35 mA (@104Mhz)
 Standby < 180 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
⚫ Low Power Feature
 Reduced Array Refresh
 Temperature Controlled Refresh
 Deep power-down (DPD) mode
⚫ Operation Frequency up to 104Mhz
⚫ Operating temperature Range
Industrial: -40°C~85°C
Automotive A1: -40°C~85°C
⚫ Package: 54-ball VFBGA




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About Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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