Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets

Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 9.1 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)