DESCRIPTION
The 80N03 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .

GENERAL FEATURES
�VDS = 30 V, ID = 80 A
RDS(ON) < 6 mΩ @ VGS = 10 V
�High density cell design for ultra low Rdson
�Fully characterized Avalanche voltage and current
�Good stabilty and unifomity with high EAS
�Excellent package for good heat dissipation
�Special process technology for high ESD capability

Application Ordering Information
�Power switching application
�Hard Switched and High Frequency Circuits
�Uninterruptible Power Supply