GENERAL DESCRIPTION
SVD2N70M/F/T is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure VDMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.

FEATURES
∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability