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M29W160FT Datasheet (PDF) - Numonyx B.V

M29W160FT Datasheet PDF - Numonyx B.V
Part # M29W160FT
Download  M29W160FT Download

File Size   1068.7 Kbytes
Page   57 Pages
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V
Description 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

M29W160FT Datasheet (PDF)

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M29W160FT Datasheet PDF - Numonyx B.V

Part # M29W160FT
Download  M29W160FT Click to download

File Size   1068.7 Kbytes
Page   57 Pages
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V
Description 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

M29W160FT Datasheet (HTML) - Numonyx B.V

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M29W160FT Product details

Description

The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.



Features

■ Supply voltage

   – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read

   – VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only)

■ Access time: 70, 80 ns

■ Programming time

   – 10 µs per byte/word typical

■ Memory organization:

   – M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks

   – M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks

■ Program/Erase controller

   – Embedded byte/word program algorithms

■ Erase Suspend and Resume modes

   – Read and Program another block during Erase Suspend

■ Unlock Bypass Program command

   – Faster production/batch programming

■ VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only)

■ Temporary block unprotection mode

■ Common Flash interface

   – 64 bit security code

■ Low power consumption

   – Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ Electronic signature

   – Manufacturer code: 0020h

   – Top device codes

         M29W160FT: 22C4h

         M29W320FT: 22CAh

   – Bottom device codes

         M29W160FB: 2249h

         M29W320FB: 22CBh

■ Automotive device grade 3:

   – Temperature: –40 to 125 °C

   – Automotive grade certified

■ TSOP48 package is ECOPACK®



 




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