Description
The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses
Micron’s 4Gb DDR3L SDRAM die (essentially two
ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s
4Gb DDR3 SDRAM data sheet for the specifications
not included in this document. Specifications for base
part number MT41K1G4 correlate to TwinDie manufacturing
part number MT41K2G4; specifications for
base part number MT41K512M8 correlate to TwinDie
manufacturing part number MT41K1G8.

Features
• Uses 4Gb Micron die
• Two ranks (includes dual CS#, ODT, CKE, and ZQ
balls)
• Each rank has eight internal banks for concurrent
operation
• VDD = VDDQ = 1.35V (1.283–1.45V); backward compatible
to VDD = VDDQ = 1.5V ±0.075V
• 1.35V center-terminated push/pull I/O
• JEDEC-standard ball-out
• Low-profile package
• TC of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
– Industrial temperature (IT) available (Rev. E)