1 Features
• Monolithic, matched, N-Channel JFETs
• Self-biased gates for high input impedance (>400GOhm)
• Low input capacitance: 0.85pF per JFET
• Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
• Low VGS mismatch: 30mV (max)
• Low IDSS mismatch: 5% (max)
• High gate-to-drain breakdown voltage: 30V
• Extremely Small Package: 0.8mm × 1mm X2SON