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STH315N10F7-2 Datasheet (PDF) - STMicroelectronics

STH315N10F7-2 Datasheet PDF - STMicroelectronics
Part # STH315N10F7-2_V01
Download  STH315N10F7-2 Download
File Size   797.9 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 100 V, 2.1typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages

STH315N10F7-2 Datasheet (PDF)

Go To PDF Page Download Datasheet
STH315N10F7-2 Datasheet PDF - STMicroelectronics

Part # STH315N10F7-2_V01
Download  STH315N10F7-2 Click to download

File Size   797.9 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 100 V, 2.1typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages

STH315N10F7-2 Datasheet (HTML) - STMicroelectronics


STH315N10F7-2 Product details

Features
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness

Applications
• Switching applications

Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced
trench gate structure that results in very low on-state resistance, while also reducing
internal capacitance and gate charge for faster and more efficient switching.




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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