General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
Features and benefits
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at
25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection
Applications
• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control
• Power OR-ing