Description
This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ TYPICAL RDS(on) = 0.035 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 oC
■ APPLICATIONORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

Applications
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION  INTERNAL SCHEMATIC DIAGRAM March 1999 1 3 D2PAK TO-263 (suffix ”T4”)