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STB9NC60-1 Datasheet (PDF) - STMicroelectronics

STB9NC60-1 Datasheet PDF - STMicroelectronics
Part # STB9NC60-1
Download  STB9NC60-1 Download
File Size   461.76 Kbytes
Page   10 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™ I MOSFET

STB9NC60-1 Datasheet (PDF)

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STB9NC60-1 Datasheet PDF - STMicroelectronics

Part # STB9NC60-1
Download  STB9NC60-1 Click to download

File Size   461.76 Kbytes
Page   10 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™ I MOSFET

STB9NC60-1 Datasheet (HTML) - STMicroelectronics


STB9NC60-1 Product details

DESCRIPTION

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.



■ TYPICAL RDS(on) = 0.6 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED



APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER



 




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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