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STS2NF100 Datasheet (PDF) - STMicroelectronics
STS2NF100 Datasheet PDF - STMicroelectronics
Part # STS2NF100
Download  STS2NF100 Download
File Size   284.66 Kbytes
Page   8 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET™ II POWER MOSFET

STS2NF100 Datasheet (PDF)

Go To PDF Page Download Datasheet
STS2NF100 Datasheet PDF - STMicroelectronics

Part # STS2NF100
Download  STS2NF100 Click to download

File Size   284.66 Kbytes
Page   8 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET™ II POWER MOSFET

STS2NF100 Datasheet (HTML) - STMicroelectronics


STS2NF100 Product details

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.23 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100 % AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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