NX8346TS Datasheet(PDF) - NEC

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NX8346TS Datasheet (PDF) - NEC

NX8346TS Datasheet PDF - NEC


Part #	NX8346TS

Download	NX8346TS Download

File Size	89.75 Kbytes

Page	8 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Description

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TS Datasheet (PDF)

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NX8346TS Datasheet PDF - NEC


Part #	NX8346TS

Download	NX8346TS Click to download

File Size	89.75 Kbytes

Page	8 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

Description	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8346TS Product details

DESCRIPTION
The NX8346TS is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver.

FEATURES
• Internal optical isolator
• Optical output power Pf = −3 dBm
• Low threshold current lth = 8 mA TYP. @ TC = 25°C
• Wide operating temperature range TC = −5 to +95°C
• InGaAs monitor PIN-PD

APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fibre Channel

Similar Part No. - NX8346TS

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8346TS	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8346TS-AZ	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	164Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Similar Description - NX8346TS

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX8341	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TB	102Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TS	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TB	205Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

About NEC

NEC Corporation is a Japanese multinational information technology and electronics company. The company was founded in 1899 and is headquartered in Tokyo, Japan. NEC provides a wide range of products and services including information technology, telecommunications, and electronics. Its portfolio includes computer hardware, software, and services, network solutions, display solutions, and enterprise servers and storage solutions.

NEC is known for its expertise in the field of information technology and its ability to deliver innovative and high-quality products and services. The company has operations and facilities in various countries across the world and has a strong presence in the Asia-Pacific region. NEC works closely with its customers to provide customized solutions that meet their specific requirements and needs.

In addition to its core business, NEC is also active in the fields of research and development, and is involved in various projects related to advanced technologies such as artificial intelligence, 5G networks, and the Internet of Things (IoT). NEC is committed to delivering sustainable solutions that support the development of society and improve the quality of life for people around the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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