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MA4AGSW8-1 Datasheet (PDF) - M/A-COM Technology Solutions, Inc.

MA4AGSW8-1 Datasheet PDF - M/A-COM Technology Solutions, Inc.
Part # MA4AGSW8-1
Download  MA4AGSW8-1 Download

File Size   126.75 Kbytes
Page   6 Pages
Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.
Description SP8T AlGaAs PIN Diode Switch RoHS Compliant

MA4AGSW8-1 Datasheet (PDF)

Go To PDF Page Download Datasheet
MA4AGSW8-1 Datasheet PDF - M/A-COM Technology Solutions, Inc.

Part # MA4AGSW8-1
Download  MA4AGSW8-1 Click to download

File Size   126.75 Kbytes
Page   6 Pages
Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.
Description SP8T AlGaAs PIN Diode Switch RoHS Compliant

MA4AGSW8-1 Datasheet (HTML) - M/A-COM Technology Solutions, Inc.

MA4AGSW8-1 Datasheet HTML 1Page - M/A-COM Technology Solutions, Inc. MA4AGSW8-1 Datasheet HTML 2Page - M/A-COM Technology Solutions, Inc. MA4AGSW8-1 Datasheet HTML 3Page - M/A-COM Technology Solutions, Inc. MA4AGSW8-1 Datasheet HTML 4Page - M/A-COM Technology Solutions, Inc. MA4AGSW8-1 Datasheet HTML 5Page - M/A-COM Technology Solutions, Inc. MA4AGSW8-1 Datasheet HTML 6Page - M/A-COM Technology Solutions, Inc.

MA4AGSW8-1 Product details

DESCRIPTION
M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium-Arsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required.

FEATURES
♦ Ultra Broad Bandwidth: 50 MHz to 40 GHz
♦ Functional Bandwidth : 50 MHz to 50 GHz
♦ Low Current consumption.
   • -10mA for low loss state
   • +10mA for Isolation state
♦ M/A-COM’s unique AlGaAs hetero-junction
   anode technology.
♦ Silicon Nitride Passivation
♦ Polymer Scratch protection



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