The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

N–Channel enhancement mode MOSFET

• Guaranteed 28 V, 500 MHz performance
    Output power = 4.0 W
    Gain = 16 dB (min.)
    Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V