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STPSC406B-TR Datasheet (PDF) - STMicroelectronics

STPSC406B-TR Datasheet PDF - STMicroelectronics
Part # STPSC406B-TR
Download  STPSC406B-TR Download
File Size   108.2 Kbytes
Page   8 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 600 V power Schottky silicon carbide diode

STPSC406B-TR Datasheet (PDF)

Go To PDF Page Download Datasheet
STPSC406B-TR Datasheet PDF - STMicroelectronics

Part # STPSC406B-TR
Download  STPSC406B-TR Click to download

File Size   108.2 Kbytes
Page   8 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 600 V power Schottky silicon carbide diode

STPSC406B-TR Datasheet (HTML) - STMicroelectronics


STPSC406B-TR Product details

Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Features
■ No or negligible reverse recovery
■ Switching behavior independent of temperature
■ Dedicated to PFC boost diode




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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