BUL642D2 Datasheet(PDF) - ON Semiconductor

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BUL642D2 Datasheet (PDF) - ON Semiconductor

BUL642D2 Datasheet PDF - ON Semiconductor


Part #	BUL642D2

Download	BUL642D2 Download

File Size	101.28 Kbytes

Page	8 Pages

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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Description

High Speed, High Gain Bipolar NPN Transistor with Integrated Collector?묮mitter and Built?뭝n Efficient Antisaturation Network

BUL642D2 Datasheet (PDF)

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BUL642D2 Datasheet PDF - ON Semiconductor


Part #	BUL642D2

Download	BUL642D2 Click to download

File Size	101.28 Kbytes

Page	8 Pages

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

Description	High Speed, High Gain Bipolar NPN Transistor with Integrated Collector?묮mitter and Built?뭝n Efficient Antisaturation Network

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BUL642D2 Product details

The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged.

Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized Dynamic VCEsat
• “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads
• Avalanche Energy 20 mJ Typical Capability
• Pb−Free Package is Available*

Similar Part No. - BUL642D2

Manufacturer	Part #	Datasheet	Description
Seme LAB	BUL64A	19Kb / 2P	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Seme LAB	BUL64B	19Kb / 2P	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Similar Description - BUL642D2

Manufacturer	Part #	Datasheet	Description
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About ON Semiconductor

ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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