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IPW50R250CP Datasheet (PDF) - Infineon Technologies AG
IPW50R250CP Datasheet PDF - Infineon Technologies AG
Part # IPW50R250CP
Download  IPW50R250CP Download
File Size   537.66 Kbytes
Page   11 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description CoolMOSTM Power Transistor Features New revolutionary high voltage technology

IPW50R250CP Datasheet (PDF)

Go To PDF Page Download Datasheet
IPW50R250CP Datasheet PDF - Infineon Technologies AG

Part # IPW50R250CP
Download  IPW50R250CP Click to download

File Size   537.66 Kbytes
Page   11 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description CoolMOSTM Power Transistor Features New revolutionary high voltage technology

IPW50R250CP Datasheet (HTML) - Infineon Technologies AG


IPW50R250CP Product details

Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications

CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM Stages for ATX, Notebook adapter, PDP and LCD TV




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About Infineon Technologies AG

Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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