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IPW50R299CP Datasheet (PDF) - Infineon Technologies AG

IPW50R299CP Datasheet PDF - Infineon Technologies AG
Part # IPW50R299CP
Download  IPW50R299CP Download
File Size   536.62 Kbytes
Page   11 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

IPW50R299CP Datasheet (PDF)

Go To PDF Page Download Datasheet
IPW50R299CP Datasheet PDF - Infineon Technologies AG

Part # IPW50R299CP
Download  IPW50R299CP Click to download

File Size   536.62 Kbytes
Page   11 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

IPW50R299CP Datasheet (HTML) - Infineon Technologies AG


IPW50R299CP Product details

Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications

CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Notebook adapter, PDP and LCD TV
• PWM for Notebook adapter, PDP and LCD TV




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About Infineon Technologies AG


Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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