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G01H1202 Datasheet (PDF) - Infineon Technologies AG

G01H1202 Datasheet PDF - Infineon Technologies AG
Part # G01H1202
Download  G01H1202 Download
File Size   912.52 Kbytes
Page   13 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description HighSpeed 2-Technology

G01H1202 Datasheet (PDF)

Go To PDF Page Download Datasheet
G01H1202 Datasheet PDF - Infineon Technologies AG

Part # G01H1202
Download  G01H1202 Click to download

File Size   912.52 Kbytes
Page   13 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description HighSpeed 2-Technology

G01H1202 Datasheet (HTML) - Infineon Technologies AG


G01H1202 Product details

HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Qualified according to JEDEC2
for target applications
• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/




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About Infineon Technologies AG


Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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