FC13 Datasheet(PDF) - Sanyo Semicon Device

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FC13 Datasheet (PDF) - Sanyo Semicon Device

FC13 Datasheet PDF - Sanyo Semicon Device


Part #	FC13

Download	FC13 Download

File Size	102.05 Kbytes

Page	3 Pages

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

Logo

Description

Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications

FC13 Datasheet (PDF)

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FC13 Datasheet PDF - Sanyo Semicon Device


Part #	FC13

Download	FC13 Click to download

File Size	102.05 Kbytes

Page	3 Pages

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

Logo

Description	Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications

FC13 Datasheet (HTML) - Sanyo Semicon Device

FC13 Datasheet HTML 1Page - Sanyo Semicon Device

FC13 Datasheet HTML 2Page - Sanyo Semicon Device

FC13 Datasheet HTML 3Page - Sanyo Semicon Device

FC13 Product details

Features
• Composite type with 2 FETs contained in the CP package currently in use, improving the mounting efficiency greatly.
• The FC13 is formed with two chips, being equivalent to the 2SK303, placed in one package.
• Excellent in thermal equilibrium and pair capability and especially suited for differential amp.

Similar Part No. - FC13

Manufacturer	Part #	Datasheet	Description
Sanyo Semicon Device	FC130	36Kb / 2P	NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
List of Unclassifed Man...	FC1306T	1Mb / 27P	Single Chip Controller for PC ATA Card Adapters
Sanyo Semicon Device	FC131	37Kb / 2P	PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
	FC132	47Kb / 2P	NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
	FC133	44Kb / 2P	PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Similar Description - FC13

Manufacturer	Part #	Datasheet	Description
Sanyo Semicon Device	2SA1687	118Kb / 4P	Low-Frequency General-Purpose Amp Applications???
	2SA1701	119Kb / 4P	Low-Frequency General-Purpose Amp Applications????
	2SA1745	106Kb / 4P	Low-Frequency General-Purpose Amp Applications
	2SA1881	123Kb / 4P	Low-Frequency General-Purpose Amp Applications?
	2SA1882	124Kb / 4P	Low-Frequency General-Purpose Amp Applications?
	2SB1295	114Kb / 4P	Low-Frequency General-Purpose Amp Applications???
	2SC4413	82Kb / 3P	Low-Frequency General-Purpose Amp Applications??????????
	FC11	92Kb / 3P	Low-Frequency General-Purpose Amp, Differential Amp Applications
	FC119	139Kb / 5P	High-Frequency General-Purpose Amp, Differential Amp Applications
	FC120	174Kb / 6P	High-Frequency General-Purpose Amp, Differential Amp Applications

About Sanyo Semicon Device

Sanyo Semiconductor Device Corporation, or Sanyo Semicon Device, was a subsidiary of Sanyo Electric Co., Ltd., a Japanese electronics company. Sanyo Semicon Device was a manufacturer of semiconductor devices, including diodes, transistors, and other components for consumer electronics, automotive, and industrial applications. The company was established in 1970 and was headquartered in Osaka, Japan.

Sanyo Semicon Device was known for its high-quality products and its commitment to meeting the needs of its customers. The company had a strong focus on research and development and was involved in the development of new technologies and products for the semiconductor industry. Sanyo Semicon Device's products were widely used in a variety of applications and helped support the growth of the electronics industry.

In 2010, Sanyo Electric was acquired by Panasonic Corporation, a leading global electronics company. As a result, Sanyo Semicon Device became a subsidiary of Panasonic and was integrated into its semiconductor business. The acquisition allowed Panasonic to expand its product portfolio and offerings in the semiconductor market and further strengthen its position in the electronics industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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