EMH2801 Datasheet(PDF) - Sanyo Semicon Device

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EMH2801 Datasheet (PDF) - Sanyo Semicon Device

EMH2801 Datasheet PDF - Sanyo Semicon Device


Part #	EMH2801

Download	EMH2801 Download

File Size	366.73 Kbytes

Page	5 Pages

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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Description

SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

EMH2801 Datasheet (PDF)

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EMH2801 Datasheet PDF - Sanyo Semicon Device


Part #	EMH2801

Download	EMH2801 Click to download

File Size	366.73 Kbytes

Page	5 Pages

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

Logo

Description	SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

EMH2801 Datasheet (HTML) - Sanyo Semicon Device

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EMH2801 Datasheet HTML 5Page - Sanyo Semicon Device

EMH2801 Product details

MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

Features
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting
• [MOSFET]
• Low ON-resistance
• 1.8V drive
• [SBD]
• Small switching noise
• Low forward voltage (IF=2.0A, VF max=0.46V)
• Halogen free compliance

Similar Part No. - EMH2801

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	EMH2801	660Kb / 8P	P-Channel Power MOSFET July, 2013
ON Semiconductor	EMH2801-TL-H	660Kb / 8P	P-Channel Power MOSFET July, 2013

Similar Description - EMH2801

Manufacturer	Part #	Datasheet	Description
Sanyo Semicon Device	CPH5847	49Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
	CPH5854	55Kb / 6P	MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
	CPH5855	69Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
	CPH5824	47Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
	MCH5811	54Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
	MCH5812	54Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
	MCH5823	54Kb / 5P	MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
	MCH5834	56Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
	SCH2816	50Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
	SCH2819	48Kb / 6P	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

About Sanyo Semicon Device

Sanyo Semiconductor Device Corporation, or Sanyo Semicon Device, was a subsidiary of Sanyo Electric Co., Ltd., a Japanese electronics company. Sanyo Semicon Device was a manufacturer of semiconductor devices, including diodes, transistors, and other components for consumer electronics, automotive, and industrial applications. The company was established in 1970 and was headquartered in Osaka, Japan.

Sanyo Semicon Device was known for its high-quality products and its commitment to meeting the needs of its customers. The company had a strong focus on research and development and was involved in the development of new technologies and products for the semiconductor industry. Sanyo Semicon Device's products were widely used in a variety of applications and helped support the growth of the electronics industry.

In 2010, Sanyo Electric was acquired by Panasonic Corporation, a leading global electronics company. As a result, Sanyo Semicon Device became a subsidiary of Panasonic and was integrated into its semiconductor business. The acquisition allowed Panasonic to expand its product portfolio and offerings in the semiconductor market and further strengthen its position in the electronics industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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