DESCRIPTION
The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

FEATURES
• Smart 5 technology
    – 5  V  VCC
    – 5 V or 12 V VPP
• High performance read access time
    LH28F008SC-V85/SCH-V85
        – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
    LH28F008SC-V12/SCH-V12
        – 120 ns (5.0±0.5 V)
• Enhanced automated suspend options
    – Byte write suspend to read
    – Block erase suspend to byte write
    – Block erase suspend to read
• Enhanced data protection features
    – Absolute protection with VPP = GND
    – Flexible block locking
    – Block erase/byte write lockout during  power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
    – Sixteen 64 k-byte erasable blocks
• Enhanced cycling capability
    – 100 000 block erase cycles
    – 1.6 million block erase cycles/chip
• Low power management
    – Deep power-down mode
    – Automatic power saving mode decreases ICC in static mode
• Automated byte write and block erase
    – Command user interface
    – Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
    – 40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend
    – 44-pin SOP (SOP044-P-0600)
    – 48-ball CSP (FBGA048-P-0608)