Description
The LRS1805A is a combination memory organized as 4,194,304 x16 bit flash memory and 1,048,576 x16 bit Smartcombo RAM in one package.

Features
- Power supply • • • • 2.7V to 3.3V(Flash)
                         • • • • 2.7V to 3.1V(Smartcombo RAM)
- Operating temperature • • • • -25°C to +85°C
- Not designed or rated as radiation hardened
- 72pin CSP (LCSP072-P-0811) plastic package
- Flash memory has P-type bulk silicon, and Smartcombo RAM has P-type bulk silicon

Flash Memory
- Access Time • • • • 85 ns (Max.)
- Power supply current (The current for F-VCC pin and F-VPP pin)
   Read • • • • 25 mA (Max. tCYCLE = 200ns, CMOS Input)
   Word write • • • • 60 mA (Max.)
   Block erase • • • • 30 mA (Max.)
   Reset Power-Down • • • • 25 µA (Max. F-RST = GND ± 0.2V,
                                                                 IOUT (F-RY/BY) = 0mA)
   Standby • • • • 25 µA (Max. F-CE = F-RST = F-VCC ± 0.2V)
- Optimized Array Blocking Architecture
   Eight 4K-word Parameter Blocks
   One-hundred and twenty-seven 32K-word Main Blocks
   Top Parameter Location
- Extended Cycling Capability
   100,000 Block Erase Cycles (F-VPP = 1.65V to 3.3V)
   1,000 Block Erase Cycles and total 80 hours (F-VPP = 11.7V to 12.3V)
- Enhanced Automated Suspend Options
   Word Write Suspend to Read
   Block Erase Suspend to Word Write
   Block Erase Suspend to Read

Smartcombo RAM
- Access Time • • • • 85 ns (Max.)
- Cycle time • • • • 85 to 32,000 ns
- Power Supply current
   Operating current • • • • 20 mA (Max. tRC, tWC = Min.)
   Standby current (Data retention current) • • • • 80 µA (Max.)
   Sleep Mode (Data non-retention current) • • • • 15 µA (Max.)