Mobile Low-Power DDR SDRAM

Features

• VDD/VDDQ = 1.70–1.95V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center aligned with data for WRITEs

• 4 internal banks for concurrent operation

• Data masks (DM) for masking write data; one mask per byte

• Programmable burst lengths (BL): 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• Temperature-compensated self refresh (TCSR)

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh, 32ms for automotive temperature