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STW62N65M5 Datasheet (PDF) - STMicroelectronics
STW62N65M5 Datasheet PDF - STMicroelectronics
Part # STW62N65M5
Download  STW62N65M5 Download
File Size   885.27 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 package

STW62N65M5 Datasheet (PDF)

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STW62N65M5 Datasheet PDF - STMicroelectronics

Part # STW62N65M5
Download  STW62N65M5 Click to download

File Size   885.27 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 package

STW62N65M5 Datasheet (HTML) - STMicroelectronics


STW62N65M5 Product details

Description
This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.

Features
• Designed for automotive applications and AEC-Q101 qualified
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested

Applications
• Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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