Manufacturer | Part # | Datasheet | Description |
IXYS Corporation |
IXKC19N60C5
|
120Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
IXKR47N60C5
|
137Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
IXKH30N60C5
|
112Kb / 4P |
CoolMOS Power MOSFET N-Channel Enhancement Mode Low Rdson, High Vdss MOSFET
|
IXKC25N80C
|
119Kb / 4P |
N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
|
STMicroelectronics |
STF9N80K5
|
762Kb / 16P |
Ultra-low gate charge
November 2015 Rev 2 |
STD6N90K5
|
825Kb / 16P |
Ultra-low gate charge
November 2016 Rev 1 |
Infineon Technologies A... |
SPD06N60C3
|
401Kb / 11P |
Ultra low gate charge
|
STMicroelectronics |
STF15N95K5
|
1Mb / 18P |
Ultra low gate charge
February 2014 Rev 2 |
STD5N95K5
|
1Mb / 26P |
Ultra-low gate charge
January 2017 Rev 4 |
STD7N90K5
|
817Kb / 16P |
Ultra-low gate charge
October 2016 Rev 1 |