Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

 • Low Profile (<0.7 mm)
 • Dual Sided Cooling Compatible
 • Ultra Low Package Inductance
 • Optimized for High Frequency Switching above 1MHz
 • Ideal for CPU Core DC-DC Converters
 • Optimized for SyncFET Socket of Sync. Buck Converter
 • Low Conduction Losses
 • Compatible with Existing Surface Mount Techniques