DESCRIPTION AND APPLICATIONS

The LP1500SOT89 is a packaged Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs)  pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes  a 0.25 mmx1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.

FEATURES

¨  27.5 dBm Output Power at 1-dB Compression at 1.8 GHz

¨  17 dB Power Gain at 1.8 GHz

¨  1.0 dB Noise Figure

¨  44 dBm Output IP3 at 1.8 GHz

¨  50% Power-Added Efficiency