Description
The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

Features
• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate

Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers