DESCRIPTION
The UPA833TF has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.

FEATURES
• LOW NOISE:
   Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
   Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
• HIGH GAIN:
   Q1: |S21E|2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,
   lc = 3 mA
   Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,
   lc = 10 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
   (Q1: NE688, Q1: NE685)