HGTG30N60B3 Datasheet(PDF)

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HGTG30N60B3 Datasheet (PDF) - Intersil Corporation


Part #	HGTG30N60B3

Download	HGTG30N60B3 Download

File Size	105.22 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

60A, 600V, UFS Series N-Channel IGBT

HGTG30N60B3 Datasheet (PDF)

Download Datasheet


Part #	HGTG30N60B3

Download	HGTG30N60B3 Click to download

File Size	105.22 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	60A, 600V, UFS Series N-Channel IGBT

HGTG30N60B3 Datasheet (HTML) - Intersil Corporation

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HGTG30N60B3 Product details

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features
• 60A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss

Similar Part No. - HGTG30N60B3

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG30N60B3	221Kb / 8P	60A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor	HGTG30N60B3D	214Kb / 8P	60A, 600V, UFS Series N-Channel IGBT
Intersil Corporation	HGTG30N60B3D	109Kb / 7P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	HGTG30N60B3D	228Kb / 8P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGTG30N60B3D	228Kb / 8P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

More results

Similar Description - HGTG30N60B3

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG30N60B3	221Kb / 8P	60A, 600V, UFS Series N-Channel IGBT
	HGTG30N60B3D	214Kb / 8P	60A, 600V, UFS Series N-Channel IGBT
	HGTG40N60B3	90Kb / 8P	70A, 600V, UFS Series N-Channel IGBT
Intersil Corporation	HGTG20N60C3	81Kb / 7P	45A, 600V, UFS Series N-Channel IGBT January 2000
	HGTG30N60B3D	109Kb / 7P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG30N60C3	99Kb / 6P	63A, 600V, UFS Series N-Channel IGBT January 2000
	HGTG40N60B3	76Kb / 7P	70A, 600V, UFS Series N-Channel IGBT January 2000
Fairchild Semiconductor	HGTG40N60B3	154Kb / 8P	70A, 600V, UFS Series N-Channel IGBT
Harris Corporation	HGTG40N6	65Kb / 6P	70A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor	HGT1S20N60C3S9A	153Kb / 8P	45A, 600V, UFS Series N-Channel IGBT

More results

About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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