| Manufacturer | Part # | Datasheet | Description |
Cypress Semiconductor |
CY7C1141V18
|
1Mb / 28P |
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1241V18
|
1Mb / 28P |
36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1261V18
|
1Mb / 28P |
36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
|
CY7C1541V18
|
1Mb / 28P |
72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1541V18
|
665Kb / 28P |
72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1241KV18
|
913Kb / 28P |
36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1261KV18
|
943Kb / 28P |
36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Renesas Technology Corp |
RMQSAA3636DGBA
|
832Kb / 30P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
|
|
RMQSKA3636DGBA
|
896Kb / 31P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT
|
|
RMQSGA3636DGBA
|
359Kb / 30P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
May 25, 2015 |
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
