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IRFD9220 Datasheet (PDF) - International Rectifier

IRFD9220 Datasheet PDF - International Rectifier
Part # IRFD9220
Download  IRFD9220 Download
File Size   172.31 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

IRFD9220 Datasheet (PDF)

Go To PDF Page Download Datasheet
IRFD9220 Datasheet PDF - International Rectifier

Part # IRFD9220
Download  IRFD9220 Click to download

File Size   172.31 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

IRFD9220 Datasheet (HTML) - International Rectifier


IRFD9220 Product details

HEXFET Power MOSFET

● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● For Automatic Insertion
● End Stackable
● P-Channel
● Fast Switching
● Ease of Paralleling




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About International Rectifier


International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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