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IRG4BC20S Datasheet (PDF) - International Rectifier
IRG4BC20S Datasheet PDF - International Rectifier
Part # IRG4BC20S
Download  IRG4BC20S Download
File Size   157.98 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

IRG4BC20S Datasheet (PDF)

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IRG4BC20S Datasheet PDF - International Rectifier

Part # IRG4BC20S
Download  IRG4BC20S Click to download

File Size   157.98 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

IRG4BC20S Datasheet (HTML) - International Rectifier


IRG4BC20S Product details

Features
• Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs




Similar Part No. - IRG4BC20S

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International Rectifier		 IRG4BC20S IRF-IRG4BC20S Datasheet
98Kb / 35P		 Fit Rate / Equivalent Device Hours
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287Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
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Similar Description - IRG4BC20S

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRG4BC20SD IRF-IRG4BC20SD Datasheet
287Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
IRG4BC20SDS IRF-IRG4BC20SDS Datasheet
382Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
IRG4BC20U IRF-IRG4BC20U Datasheet
167Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
IRG4BC30S IRF-IRG4BC30S Datasheet
161Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
IRG4BC30SS IRF-IRG4BC30SS Datasheet
152Kb / 9P		 INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
IRG4BC40U IRF-IRG4BC40U Datasheet
169Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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