Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

IRG4RC10SD Datasheet (PDF) - International Rectifier
IRG4RC10SD Datasheet PDF - International Rectifier
Part # IRG4RC10SD
Download  IRG4RC10SD Download
File Size   189.76 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

IRG4RC10SD Datasheet (PDF)

Go To PDF Page Download Datasheet
IRG4RC10SD Datasheet PDF - International Rectifier

Part # IRG4RC10SD
Download  IRG4RC10SD Click to download

File Size   189.76 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

IRG4RC10SD Datasheet (HTML) - International Rectifier


IRG4RC10SD Product details

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use
    in bridge configurations
• Industry standard TO-252AA package
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   




Similar Part No. - IRG4RC10SD

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRG4RC10SDPBF IRF-IRG4RC10SDPBF Datasheet
353Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10SDPBF IRF-IRG4RC10SDPBF Datasheet
353Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10SDPBF IRF-IRG4RC10SDPBF_15 Datasheet
353Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
More results


Similar Description - IRG4RC10SD

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRG4BC10S IRF-IRG4BC10S Datasheet
157Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
IRG4BC10SD-S IRF-IRG4BC10SD-S Datasheet
217Kb / 12P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
IRG4BC10UD IRF-IRG4BC10UD Datasheet
184Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4BC15MD IRF-IRG4BC15MD Datasheet
256Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A)
IRG4BC15UD-S IRF-IRG4BC15UD-S Datasheet
210Kb / 12P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
IRG4BC20FD-S IRF-IRG4BC20FD-S Datasheet
222Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
IRG4BC20UDS IRF-IRG4BC20UDS Datasheet
235Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
IRG4BC30UD IRF-IRG4BC30UD Datasheet
234Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4PC30KD IRF-IRG4PC30KD Datasheet
178Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4RC10S IRF-IRG4RC10S Datasheet
120Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
More results




About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com