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IRG4RC20F Datasheet (PDF) - International Rectifier
IRG4RC20F Datasheet PDF - International Rectifier
Part # IRG4RC20F
Download  IRG4RC20F Download
File Size   264.06 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

IRG4RC20F Datasheet (PDF)

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IRG4RC20F Datasheet PDF - International Rectifier

Part # IRG4RC20F
Download  IRG4RC20F Click to download

File Size   264.06 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

IRG4RC20F Datasheet (HTML) - International Rectifier


IRG4RC20F Product details

Fast Speed IGBT

Features
• Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low VCE(on) with low switching losses

Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating




Similar Part No. - IRG4RC20F

ManufacturerPart #DatasheetDescription
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International Rectifier		 IRG4RC20FPBF IRF-IRG4RC20FPBF Datasheet
399Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR
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Similar Description - IRG4RC20F

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRG4BC20U IRF-IRG4BC20U Datasheet
167Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
IRG4BC30K IRF-IRG4BC30K Datasheet
137Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4BC30U IRF-IRG4BC30U Datasheet
167Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4BC30W IRF-IRG4BC30W Datasheet
139Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
IRG4BC30WS IRF-IRG4BC30WS Datasheet
188Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
IRG4BC40U IRF-IRG4BC40U Datasheet
169Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
IRG4PC30U IRF-IRG4PC30U Datasheet
145Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4PC40U IRF-IRG4PC40U Datasheet
148Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
IRG4PC50F IRF-IRG4PC50F Datasheet
146Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
IRGBC30U IRF-IRGBC30U Datasheet
244Kb / 6P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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