IRGBF20F Datasheet(PDF) - International Rectifier

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IRGBF20F Datasheet (PDF) - International Rectifier

IRGBF20F Datasheet PDF - International Rectifier


Part #	IRGBF20F

Download	IRGBF20F Download

File Size	255.19 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)

IRGBF20F Datasheet (PDF)

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IRGBF20F Datasheet PDF - International Rectifier


Part #	IRGBF20F

Download	IRGBF20F Click to download

File Size	255.19 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)

IRGBF20F Datasheet (HTML) - International Rectifier

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IRGBF20F Product details

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

Similar Part No. - IRGBF20F

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRGBF20F	98Kb / 35P	Fit Rate / Equivalent Device Hours

Similar Description - IRGBF20F

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30W	139Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRGBF30F	253Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGPF20F	260Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
	IRGPF30F	256Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGPF40F	259Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A)
	IRGPF50F	261Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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