MSAFA1N100P3 Datasheet(PDF) - Microsemi Corporation

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MSAFA1N100P3 Datasheet (PDF) - Microsemi Corporation

MSAFA1N100P3 Datasheet PDF - Microsemi Corporation


Part #	MSAFA1N100P3

Download	MSAFA1N100P3 Download

File Size	44.69 Kbytes

Page	2 Pages

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

Logo

Description

N-Channel enhancement mode high density

MSAFA1N100P3 Datasheet (PDF)

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MSAFA1N100P3 Datasheet PDF - Microsemi Corporation


Part #	MSAFA1N100P3

Download	MSAFA1N100P3 Click to download

File Size	44.69 Kbytes

Page	2 Pages

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

Logo

Description	N-Channel enhancement mode high density

MSAFA1N100P3 Datasheet (HTML) - Microsemi Corporation

MSAFA1N100P3 Datasheet HTML 1Page - Microsemi Corporation

MSAFA1N100P3 Datasheet HTML 2Page - Microsemi Corporation

MSAFA1N100P3 Product details

MOSFET Device

Features
• Low On-State resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing “L” Suffix
• Available with “J” leads

Applications
• Implantable Cardio Defibrillator

Similar Part No. - MSAFA1N100P3

Manufacturer	Part #	Datasheet	Description
Microsemi Corporation	MSAFA1N100D	78Kb / 3P	Fast MOSFET Die for Implantable Cardio Defibrillator Applications
	MSAFA1N100D	225Kb / 3P	Fast MOSFET Die for Implantable Cardio Defibrillator Applications
	MSAFA1N100D	225Kb / 3P	Fast MOSFET Die for Implantable Cardio Defibrillator Applications

Similar Description - MSAFA1N100P3

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STD20N06	174Kb / 10P	N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR Mar-1995
	STP38N06	134Kb / 11P	N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR Mar-1996
	STP40N03L-20	65Kb / 7P	N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR Mar-1996
	STP80N03L-06	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR Mar-1996
	STP80N05-09	114Kb / 9P	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR Mar-1997
	STP80N06-10	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR Mar-1996
	STW80N06-10	57Kb / 5P	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR Oct-1998
Transys Electronics	IRF830	282Kb / 3P	N-CHANNEL ENHANCEMENT MODE
List of Unclassifed Man...	P2503NVG	594Kb / 8P	N P-Channel Enhancement Mode Enhancement Mode

About Microsemi Corporation

Microsemi Corporation was an American company that specialized in the design and manufacture of semiconductor and system solutions.
The company was founded in 1960 and was headquartered in Aliso Viejo, California.
Microsemi provided a wide range of products including analog and mixed-signal integrated circuits, field-programmable gate arrays (FPGAs), power management and control products, and other semiconductor solutions.
The company's products were used in various applications such as defense and security, aerospace and aviation, industrial, and communications.
Microsemi was known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
In 2018, Microsemi was acquired by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and security products.
The Microsemi brand is no longer in use, but its technology and products continue to be a part of Microchip's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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