2SA1615-Z Datasheet(PDF)

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2SA1615-Z Datasheet (PDF) - Inchange Semiconductor Company Limited


Part #	2SA1615-Z

Download	2SA1615-Z Download

File Size	240.04 Kbytes

Page	2 Pages

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Description

isc Silicon PNP Power Transistor

2SA1615-Z Datasheet (PDF)

Download Datasheet


Part #	2SA1615-Z

Download	2SA1615-Z Click to download

File Size	240.04 Kbytes

Page	2 Pages

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

Logo

Description	isc Silicon PNP Power Transistor

2SA1615-Z Datasheet (HTML) - Inchange Semiconductor Company Limited

2SA1615-Z Datasheet HTML 1Page - Inchange Semiconductor Company Limited

2SA1615-Z Datasheet HTML 2Page - Inchange Semiconductor Company Limited

2SA1615-Z Product details

DESCRIPTION
• Large current capacity:IC(DC)= -10A IC(pulse)=-15A
• High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A)
VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
• The 2SA1615 is available for the large current control
in small dimension due to the low saturation and is
ideal for high efficiency DC/AC converters due to
the fast switching speed

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About Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited is a Chinese semiconductor company that was founded in 1997.

The company provides a wide range of products including discrete and analog power devices, and diodes for various applications in the automotive, industrial, and consumer markets.

Inchange is known for its focus on quality and reliability, and its products are widely used in power management, lighting, and other applications.

The company has operations in several countries and is one of the leading suppliers of power devices and diodes in the Asia-Pacific region.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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