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DS_K7M323625M Datasheet (PDF) - Samsung semiconductor

DS_K7M323625M Datasheet PDF - Samsung semiconductor
Part # DS_K7M323625M
Download  DS_K7M323625M Download
File Size   211.07 Kbytes
Page   18 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 1Mx36 & 2Mx18 Flow-Through NtRAM

DS_K7M323625M Datasheet (PDF)

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DS_K7M323625M Datasheet PDF - Samsung semiconductor

Part # DS_K7M323625M
Download  DS_K7M323625M Click to download

File Size   211.07 Kbytes
Page   18 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 1Mx36 & 2Mx18 Flow-Through NtRAM

DS_K7M323625M Datasheet (HTML) - Samsung semiconductor


DS_K7M323625M Product details

GENERAL DESCRIPTION
The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A .
• 165FBGA(11x15 ball aray) with body size of 15mmx17mm.




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