Features
■ Small footprint due to small and thin package
■ High speed switching : 60% speed up (compare with current type)
■ Small gate charge : Qg = 20 nC (typ.)
■ Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
■ High forward transfer admittance : |Yfs| = 16 S (typ.)
■ Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
■ Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics