| Electronic Components Datasheet Search |
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VS2-152D-R/ Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() Braemac Americas-Symmetry | SL869LVS232T001 | Telit | baud rate @ 9600, GPS, GLONASS, QZSS |
| 0 | |
| SL869LVS232R001 | Telit | SL869L-V2S MODULE G2 AXN_2.32 reel |
| 0 | ||
![]() Chip-Germany GmbH | SIOV-S20K115 | TDK Corporation | RoHS : Unknown | 251 | ||
![]() FDH Electronics | VS-215-1 | Leach International Corporation | Relays & Cont | 7 | ||
| VS-233-1 | Leach International Corporation | Relays | 0 | |||
![]() Maritex | PESD36VS2UT,215![]() | Nexperia | TVS Diodes & ESD Suppressors; PESD36VS2UT,215; NEXPERIA; 40 V RoHS : Compliant |
| 12,001 | |
| 4117VS20DC12V1.0W | Ningbo Forward Relay Corporation Ltd | Electromagnetic relay; contact rating current 20A; coil voltage 12VDC; break contact (1V); 2x20A/14VDC; 2x10A/120VAC |
| 5,335 | ||
| XY2500F-BVS-2P | Xinya Electronics Co Ltd | Pluggable terminal block; 5.08mm pitch; 2-ways; female; for wire 2.5mm2; wire insertion direction 90� to plug-in direction; p.bronze contacts; brass cage; UL 250V/12A |
| 308 | ||
TVS2200DRVR![]() | Texas Instruments | Surge Suppressors; TVS2200DRVR; TEXAS INSTRUMENTS; 6; 2 mm; 800 �m RoHS : Compliant |
| 2 | ||
![]() Vyrian | MRFE6VS25GN-960 | NXP Semiconductors | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET RoHS : Not Compliant | 7,147 | ||
| MT18HVS25672CHY-53EXX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 7,072 | |||
| MT18HVS25672KY-667A1 | Micron Technology Inc | Memory IC, 256MX72, CMOS, PDMA244 RoHS : Compliant | 6,980 | |||
MT18HVS25672PKIY-667XX![]() | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 6,628 | |||
| MT18HVS25672KY-53EA1 | Micron Technology Inc | DRAM, 256MX72, 0.5ns, CMOS, PDMA244 RoHS : Compliant | 6,430 | |||
MT18HVS25672KY-80EXX![]() | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 6,191 | |||
MT18HVS25672PKIY-80EXX![]() | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 5,931 | |||
| MT18HVS25672CHY-40EXX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 5,796 | |||
MT18HVS25672PKIZ-667XX![]() | Micron Technology Inc | DDR2 DRAM Module, 256MX72, CMOS | 5,706 | |||
| MT18HVS25672KY-80EA1 | Micron Technology Inc | DRAM, 256MX72, 0.4ns, CMOS, PDMA244 RoHS : Compliant | 5,450 | |||
MT18HVS25672KY-53EXX![]() | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 5,172 | |||
| MT18HVS25672CHY-53EE1 | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS RoHS : Compliant | 2,844 | |||
| MRFE6VS25LR5 | NXP Semiconductors | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 2,777 | |||
| MT18HVS25672CHY-667XX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 2,748 | |||
MT18HVS25672KY-667XX![]() | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 2,532 | |||
![]() Wuhan P&S | VS-20MQ060HM3/5AT | Vishay Intertechnologies | Schottky Rectifier, 60V,2A RoHS : Compliant |
| 90,000 | |
| VS-20ETS12S-M3 | Vishay Intertechnologies | 1200VRRM,20A,SMT Input Rectifier Diode RoHS : Compliant |
| 4,000 | ||
| VS-20CTQ150STRL-M3 | Vishay Intertechnologies | Schottky diode 150 V 10A RoHS : Compliant |
| 800 |
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