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7C Marking, BAS70T Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS70T Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification Surface Mount Schottky Barrier Diode BAS70T/-04T/-05T/-06T H010 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=10μA 70 V Leakage current IR VR=50V,tp<300μs 100 nA Forward voltage VF IF=1.0mA,tp<300μS IF=15mA,tp<300μS 410 1000 mV Typical total capacitance CT VR=0V,f=1MHz 2.0 pF Reverse recovery Time trr IF=IR=10mA,Irr=0.1*IR,RL=100Ω 5.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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