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2X Marking, HABT4401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HABT4401 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page  ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4 HABT4401(NPN) REPLACEMENT TYPE :MMBT4401 FEATURES Switching Transistor MAXIMUM RATINGS (TA = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=100 μA ,IE=0 60 V Collector-Emitter Breakdown Voltage VCEO IC=1mA ,IB=0 40 V Emitter-Base Breakdown Voltage VEBO IE=100 μA,IC=0 6 V Collector Cut-off current ICEX VCE=35V,VEB(off)=0.4V 0.1 μA Collector Cut-off Current ICBO VCB=50V,IE=0 0.1 μA Emitter Cut-off Current IEBO VEB=5V,IC=0 0.1 μA DC Current Gain hFE(1) VCE=1V,IC=0.1mA 20 hFE(2) VCE=1V,IC=1mA 40 hFE(3) VCE=1V,IC=10mA 80 hFE(4) VCE=1V,IC=150Ma 100 300 hFE(5) VCE=2V,IC=500mA 40 Collector-Emitter Saturation Voltage VCE(sat) IC=150mA,IB=15mA 0.4 V IC=500mA,IB=50mA 0.75 Base-Emitter Saturation Voltage VBE(sat) IC=150mA,IB=15mA 0.95 V IC=500mA,IB=50mA 1.2 Transition Frequency fT VCE=10V,IC=20mA,f=100MHz 250 MHz Delay Time tD VCC=30V,VBE=-2V IC=150mA, IB1=15mA 15 nS Rise Time tR 20 nS Storage Time ts VCC=30V,IC=150mA IB1= IB2=15mA 225 nS Fall Time tF 60 nS Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC 300 mW RθJA 417 °C/W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 MARKING:2X 1: BASE 2:EMITTER 3: COLLECTOR Thermal Resistance Junction to Ambient SWITCHING TRANSISTOR |
Similar Description - HABT4401 |
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